Micron Technology DRAM SDRAM-DDR4, Part #: MT44K16M36RB-107E:B TR | Dynamic random access memory | DEX Wind Turbine 30V – VDDCA/VDDQ = 1

30V – VDDCA/VDDQ = 1

Fast program and erase time

SanDisk Extreme® Go USB 3

CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data

Micron Technology DRAM SDRAM-DDR4, Part #: MT44K16M36RB-107E:B TR | Dynamic random access memory | DEX Wind Turbine 30V – VDDCA/VDDQ = 1Micron Technology DRAM RLDRAM3, Part #: MT44K16M36RB 107E: B TR features: 1066 MHz DDR operation (2133 Mb s ball data rate) 76. 8 Gb s peak bandwidth (x36 at 1066 MHz clock frequency) Organization 32 Meg x 18, and 16 Meg x 36 common I O (CIO) 16 banks 1. 2V center terminated push pull I O 2. 5V VEXT, 1. 35V VDD, 1. 2V VDDQ I O Reduced cycle time (t RC (MIN) = 7. 5 12ns) SDR addressing Programmable READ WRITE latency (RL WL) and burst length Data mask